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Freescale Semiconductor Technical Data
Document Number: MRF18060B Rev. 8, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060BLR3 MRF18060BLSR3
1930- 1990 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF18060BLR3
CASE 465A - 06, STYLE 1 NI - 780S MRF18060BLSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.97 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF18060BLR3 MRF18060BLSR3 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Common- Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 60 W(2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 - 1990 MHz) Gps IRL -- -- - 10 dB 11.5 40 13 45 -- % -- dB Ciss Coss Crss -- -- -- 160 740 2.7 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 2 2.5 -- -- 3.9 0.27 4 4.5 -- Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 6 1 Vdc Adc Adc Symbol Min Typ Max Unit
1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch- to - batch consistency.
MRF18060BLR3 MRF18060BLSR3 2 RF Device Data Freescale Semiconductor
Z5 VSUPPLY VBIAS R1 R2 C1 R3 RF INPUT C9 Z1 C4 Z2 C5 Z3 DUT C7 Z4 C6 Z6 C8 Z7 C3 + C2 RF OUTPUT
C1, C3 C2 C4, C8 C5 C6 C7, C9 R1, R2 R3
10 pF, 100B Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, 100B Chip Capacitors 1.0 pF, 100B Chip Capacitor 2.2 pF, 100B Chip Capacitor 0.3 pF, 100B Chip Capacitors 10 k Chip Resistors (0805) 1.0 k Chip Resistor (0805)
Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB
0.60 x 0.09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Microstrip 1.38 x 0.09 Microstrip 0.79 x 0.09 Microstrip Teflon(R) Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
VBIAS
R1 C1 R2 C9 C4 R3 C6 C5
C2
VSUPPLY
C3 C7
C8
Ground MRF18060
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 3
VBIAS C1
R3 T2 R4 R6 RF INPUT C3
MRF18060BLR3 MRF18060BLSR3 4 RF Device Data Freescale Semiconductor
III III III
T1 C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5
R1 R2
R5 VSUPPLY C2 C4 +
C5
Z1 C6
Z2 C7
Z3
Z6 Z4 Z5 C8
Z7
RF OUTPUT
1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k, SMD Potentiometer
T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Microstrip Z5 0.433 x 1.220 Microstrip Z6 1.039 x 0.118 Microstrip Z7 0.268 x 0.055 Microstrip Substrate = 0.5 mm Teflon(R) Glass, r = 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
VBIAS
Ground
VSUPPLY
R1 R2 R3 R4
C4 T1
T2
C7
C8
C6
MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 5
I III II I I I III II I II II II
II II II II II I
R5 C2 C3 R6 MRF18060 C5
C1
I
II III I III I III III I II II
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16 Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 500 mA 12 11 300 mA 10 9 8 1 10 Pout, OUTPUT POWER (WATTS) 100 100 mA VDD = 26 Vdc f = 1880 MHz IDQ = 750 mA 100 90 80 70 60 50 40 30 20 10 0 18 20 VDD = 26 Vdc IDQ = 500 mA 22 26 24 VDD, SUPPLY VOLTAGE (VOLTS) 28 30 1W 2.5 W Pin = 5 W
Figure 5. Power Gain versus Output Power
Figure 6. Output Power versus Supply Voltage
90 Pout , OUTPUT POWER (WATTS) 80 70 3W 60 50 40 30 20 10 0 1800 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS)
90 80 70 60 50 40 30 20 10 0 0 1 3 4 2 Pin, INPUT POWER (WATTS) 5 6 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz h Pout
60 55 , DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency versus Input Power
0 -2 IRL, INPUT RETURN LOSS (dB) Gps -4 -6 -8 -10 -12 -14 IRL VDD = 26 Vdc IDQ = 500 mA 2000 2100 -16 -18 -20
15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 1700 1800 1900 f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL (at Small Signal)
MRF18060BLR3 MRF18060BLSR3 6 RF Device Data Freescale Semiconductor
Zo = 5
Zload
f = 1700 MHz
f = 1700 MHz
f = 2100 MHz
Zsource
f = 2100 MHz
VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz 1700 1800 1900 2000 2100 Zsource 0.60 - j2.53 0.80 - j3.20 0.92 - j3.42 1.07 - j3.59 1.31 - j4.00 Zload 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 7
NOTES
MRF18060BLR3 MRF18060BLSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF18060BLR3 MRF18060BLSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE G NI - 780 MRF18060BLR3
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF18060BLSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 11
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MRF18060BLR3 MRF18060BLSR3
Rev. 12 8, 5/2006 Document Number: MRF18060B
RF Device Data Freescale Semiconductor

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